Transistor Mosfet N-Kanal 800V 10,7A 190W TO220 - STP18NM80
Description
Transistor Mosfet N-Kanal 800V 10,7A 190W TO220 - STP18NM80
- Manufacturer ST MICROELECTRONICS
- Type of Transistor: MOSFET
- Type of Control Channel: N-Channel
- Maximum Power Dissipation: 190W
- Maximum Drain-Source Voltage: 800V
- Maximum Gate Source Voltage: 30V
- Maximum Drain Current: 17A
- Maximum junction temperature: 150 °C
- Maximum gate threshold voltage: 5V
- Total Gate Charge: 70 nC
- Rise Time: 28 nS
- Output Capacitance: 210 pF RD
- Maximum drain-source on-state resistance: 0.295 ohms
- Package: TO220