Transistor Mosfet N-Kanal 800V 10,7A 190W TO220 - STP18NM80
Beschreibung
Mosfet N-Kanal 800V 10,7A 190W TO220 - STP18NM80
- Hersteller ST MICROELECTRONICS
- Type of Transistor: MOSFET
- Type of Control Channel: N-Channel
- Maximum Power Dissipation: 190W
- Maximum Drain-Source Voltage: 800V
- Maximum Gate-Source Voltage: 30V
- Maximum Drain Current: 17A
- Maximum Junction Temperature: 150 °C
- Maximum Gate-Threshold Voltage: 5V
- Total Gate Charge: 70 nC
- Rise Time: 28 nS
- Output Capacitance: 210 pF RD
- Maximum Drain-Source On-State Resistance: 0.295 Ohm
- Package: TO220