Transistor Mosfet N-Kanal 30V 80A 205W T60N02RG
Description
N-Channel MOSFET Transistor 30V 80A 205W T60N02RG
- Property Value Type: T60N02RG-VB
- Manufacturer: VBsemi
- Component Type: Power MOSFET
- Channel Type: N-Channel
- Technology: Trench
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID) at TC = 25 °C: 80A
- Continuous Drain Current (ID) at TC = 70 °C: 60A
- Drain Current at TA = 25 °C: 25.8A (10-second condition)
- Pulsed Drain Current (IDM): 250A
- Power Dissipation at TC = 25 °C: 205W
- Power Dissipation at TC = 70 °C: 135W
- On-Resistance (RDS(on)): typical 5 m? at 10V
- On-Resistance (RDS(on)): typical 6 m? at 4.5V
- Gate Threshold Voltage: 1.0?2.5 V
- Gate Charge (Qg): typical 31.5 nC at 4.5V
- Gate Charge (Qg): typical 61 nC at 10V
- Input Capacitance (Ciss): typical 2201 pF
- Output capacitance (Coss) typical 525 pF
- Reverse transfer capacitance (Crss) typical 270 pF
- Thermal resistance RthJC max. 0.6 °C/W
- Junction temperature ?55 to +175 °C
- Package TO-252 / DPAK
- Number of terminals 3
- RoHS Yes