FQP65N08, 65N08 N-Fet 85V 120A 164W TO220
Description
FQP65N08, 65N08 N-Fet 85V 120A 164W TO220
- Type of Transistor: MOSFET
Type of Control Channel: N -Channel Pd
Maximum Power Dissipation: 164 W
Maximum Drain-Source Voltage: 85 V
Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage: 4 V
Maximum Drain Current: 120 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 47 nC tr
Rise Time: 31 nS Coss
Output Capacitance: 790 pF Rds
Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220