BUZ 10A N-FET 50V 17A 75W TO220
Description
BUZ10A
Type of BUZ10A transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 50
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 17
Maximum junction temperature (Tj), °C: 150
Rise Time of BUZ10A transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.12
Package: TO220M