BUZ 10 N-FET 50V 20A 75W TO220
Description
BUZ10
Type of BUZ10 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 50
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 20
Maximum junction temperature (Tj), °C: 175
Rise Time of BUZ10 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 700
Maximum drain-source on-state resistance (Rds), Ohm: 0.07
Package: TO220