BU 508D NPN 1500V 8A 125W TOP3
Description
BU508D
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 1500
Maximum collector-emitter voltage |Uce|, V: 700
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 125
Forward current transfer ratio (hFE), min: 5
Noise Figure, dB: -
Package of BU508D transistor: ISO218