BF979 PNP 20V 30mA 140mW TO51
Description
BF979 PNP 20V 30mA 140mW TO51
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.14 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 3 V
- Maximum Collector Current |Ic max|: 0.03 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 1300 MHz
- Collector Capacitance (Cc): 0.6 pF
- Forward Current Transfer Ratio (hFE), MIN: 15
- Noise Figure, dB: -
- Package: TO50