BF960 N-FET 20V 20mA 200mW SOT103
Description
BF960 N-FET 20V 20mA 200mW SOT103
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 0.2 W
- Maximum Drain-Source Voltage |Vds|: 20 V
- Maximum Gate-Source Voltage |Vgs|: 8.5 V
- Maximum Drain Current |Id|: 0.02 A
- Maximum Junction Temperature (Tj): 150 °C
- Drain-Source Capacitance (Cd): 0.8 pF
- Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
- Package: SOT103