BD709 NPN 80V 10A 60W TO220 SGS
Description
BD709 NPN 80V 10A 60W TO22 SGS
- Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 70
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of BD709 transistor: TO220
