BCY65E8 NPN 60V 100mA 1W TO18
Description
BCY65E8 NPN 60V 100mA 1W TO18
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 1 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 125 MHz
- Collector Capacitance (Cc): 6 pF
- Forward Current Transfer Ratio (hFE), MIN: 180
- Noise Figure, dB: -
- Package: TO18