2SB 365 PNP 20V 400mA 150mW TO1
Description
2SB365
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 12 V
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 75 °C
- Forward Current Transfer Ratio (hFE), MIN: 30
- Noise Figure, dB: -
- Package: TO1