2SB 263 PNP 20V 150mA 200mW TO1
Description
2SB263
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.2 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Collector-Emitter Voltage |Vce|: 18 V
- Maximum Emitter-Base Voltage |Veb|: 2 V
- Maximum Collector Current |Ic max|: 0.15 A
- Max. Operating Junction Temperature (Tj): 85 °C
- Transition Frequency (ft): 1 MHz
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO1
