BSR50 NPN 60V 2A 800mW TO92
Description
BSR50 NPN 60V 2A 800mW TO92
- Material of Transistor: Si Polarity
NPN Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE)
MIN: 2000 Noise
Figure, dB: -
Package: TO92