ACY23 PNP 32V 200mA 900mW TO1
Description
ACY23 PNP 32V 200mA 900mW TO1
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.9 W
- Maximum Collector-Base Voltage |Vcb|: 32 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 16 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 80 °C
- Transition Frequency (ft): 0.5 MHz
- Collector Capacitance (Cc): 90 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure, dB: -
- Package: TO1