2SD2389 NPN 160V 8A 80W TO3P
Description
2SD2389 NPN 160V 8A 80W TO3P
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 80 W
- Maximum Collector-Base Voltage |Vcb|: 160 V
- Maximum Collector-Emitter Voltage |Vce|: 150 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 80 MHz
- Forward Current Transfer Ratio (hFE), MIN: 5000
- Noise Figure, dB: -
- Package: TO3P