TSTS1703 (CQY35N) GaAs Infrared transmitting diode

Item number: TSTS1703

Category: Photodiodes

2,15 €

including 19% VAT. , (Standard)

From piece Price per unit
5 2,04 €
10 1,94 €
In stock!

Shipping time: 2 - 5 workdays

piece

Description

TSTS1703 (CQY35N) GaAs Infrared transmitting diode
TSTS1703 (CQY35N) GaAs Infrared Emitting Diode
  • Hermetic housing
  • with 10° lens
  • High radiant intensity
  • High radiant flux
  • Specially designed for pulsed operation
  • Good spectral matching to silicon photodetectors,

Absolute Limiting Data

Blocking voltage 5V
Forward current 100mA
Peak forward current 200mA
Surge forward current 2.5A
Power dissipation 165mW
Junction temperature 100°C
Storage temperature range -25 ... +100°C

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