STP4NB80 MOSFET N-Ch. 800V 1,4A 25W TO 220 (BUZ 100)
Description
STP4NB80 MOSFET N-Ch. 800V 1,4A 25W TO 220 (BUZ 100)
- Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 21 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 95 pF
Maximum Drain-Source On-State Resistance (Rds): 3.3 Ohm
Package: TO-220