SMY51 P-Kanal Dual MOS FET 31V 20mA 240mW DIL6
Description
SMY51 P-Kanal Dual MOS FET 31V 20mA 240mW DIL6
- Type of transistor: MOSFET
- Type of control channel: P channel
- Maximum Power Dissipation (Pd): 0.24 W
- Maximum drain-source voltage | Vds |: 31 V
- Maximum gate-source voltage | Vgs |: 31 V
- Maximum drain current | Id |: 0.02 A maximum
- Drain-to-source on-resistance (Rds): 150 ohms
- Housing: DIL6 ul>