SD30 NPN 25V 200mA 300mW TO 39
Description
SD30 NPN 25V 200mA 300mW TO 39
- Material of Transistor: Ge
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 12 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 0.5 MHz
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure, dB: -
- Package: TO39