Mosfet N-Channel 75V 80A 200W TO220AB - K80E08K3
Description
Mosfet N-Channel 75V 80A 200W TO220AB - K80E08K3
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 200 W
- Maximum Drain-Source Voltage |Vds|: 75 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 80 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 75 nC
- Rise Time (tr): 95 nS
- Drain-Source Capacitance (Cd): 500 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Package: TO220AB