Mosfet N-Channel 600V 5,5A 60W ISO220 - IRFIB6N60A
Description
Mosfet N-Channel 600V 5,5A 60W ISO220 - IRFIB6N60A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 60 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 5.5 A
- Maximum Junction Temperature (Tj): 150 °C
- Drain-Source Capacitance (Cd): 1400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
- Package: ISO220