Mosfet N-Chanel 100V 60A 180W TO247 - STW60NE10
Description
Mosfet N-Chanel 100V 60A 180W TO247 - STW60NE10
- Type Designator: STW60NE10
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 180 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 60 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 142 nC
- Rise Time (tr): 100 nS
- Drain-Source Capacitance (Cd): 640 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
- Package: TO-247