MJE350 Transistor PNP 300V 500mA 20W TO126
Description
MJE350
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 20
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 300
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of MJE350 transistor: TO126