MJ 2501 Transistor PNP 80V 10A 150W TO3
Description
MJ2501
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 150
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 1000
Noise Figure, dB: -
Package of MJ2501 transistor: TO3
