IRF 540N N-Fet 100V 33A 140W TO220
Description
IRF 540N N-Fet 100V 33A 140W TO220
- Type of field effect transistor: MOSFET
- Channel Type: N
- Total Power Dissipation (Pd): 140 W
- Maximum drain-source voltage (Vds): 100V
- Maximum gate-to-source voltage (Vgs): 10V
- Maximum Drain Current (Id): 33 A
- Higher junction temperature (Tj): 150 ° C
- Output resistance (Rds): 0.052 ohms
- Transistor Housing: TO220AB