GS112 20V 210mA 83mW TO39
Description
GS112 20V 210mA 83mW TO39
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.083 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Collector Current |Ic max|: 0.21 A
- Max. Operating Junction Temperature (Tj): 90 °C
- Forward Current Transfer Ratio (hFE), MIN: 30
- Noise Figure, dB: -
- Package: TO39
