Dual Monolithic Transistor Low Noise Matched NPN 40V 20mA 1,8W TO78 - MAT02
Description
Dual Monolithic Transistor Low Noise Matched PNP 40V 20mA 1,8W TO78 - MAT03
- Material of Transistor: Si
- Polarity: PNP
- Total Power Dissipation Ambient Temperature £ 70°C: 500mW
- Maximum Collector-Base Voltage | Vcb|: 36 V
- Maximum Collector Emitter Voltage | Vce|: 36 V
- Maximum Collector Current | Ic max|: 20 mA
- Max Operating Junction Temperature (Tj): 150°C
- Transition Frequency (ft): 190 MHz
- Collector Capacitance (Cc): --
- Current Gain (hFE), Typ. 105
- Noise Figure, dB: -
- Gehäuse: TO-78
