BU 536 NPN 480V 8A 50W TO3
Description
BU536
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1100
Maximum collector-emitter voltage |Uce|, V: 480
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 5.5
Noise Figure, dB: -
Package of BU536 transistor: TO3