BU 226 NPN 2000V 10A 125W TO3
Description
BU226
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 2000
Maximum collector-emitter voltage |Uce|, V: 800
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: -
Package of BU226 transistor: TO3