BS170 N-FETl 60V 500mA 830mW TO92
Description
BS170
Type of BS170 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.83
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 0.5
Maximum junction temperature (Tj), °C: 150
Rise Time of BS170 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 5
Package: TO92