BFX56 NPN 40V 300mA 2,6W TO 39
Description
BFX56
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 2.6
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.3
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 350
Collector capacitance (Cc), pF: 3.5
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of BFX56 transistor: TO39