BF759 NPN 350V 500mA 2W TO202
Description
BF759 NPN 350V 500mA 2W TO202
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 2 W
- Maximum Collector-Base Voltage |Vcb|: 350 V
- Maximum Collector-Emitter Voltage |Vce|: 350 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 45 MHz
- Collector Capacitance (Cc): 30 pF
- Forward Current Transfer Ratio (hFE), MIN: 40
- Noise Figure, dB: -
- Package: TO202
