BF314 NPN 30V 25mA 300mW TO226
Description
BF314 NPN 30V 25mA 300mW TO226
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 225 MHz
- Collector Capacitance (Cc): 0.4 pF
- Forward Current Transfer Ratio (hFE), MIN: 29
- Noise Figure, dB: -
- Package: TO226