BF259 NPN 300 V 100 mA 500 mW TO39
Description
BF259 NPN 300 V 100 mA 500 mW TO39
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.5 W
- Maximum Collector-Base Voltage |Vcb|: 300 V
- Maximum Collector-Emitter Voltage |Vce|: 300 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 90 MHz
- Collector Capacitance (Cc): 7 pF
- Forward Current Transfer Ratio (hFE), MIN: 25
- Noise Figure, dB: -
- Package: TO39