BF199 NPN 40V 25mA 250mW TO92
Description
BF199
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 275
Collector capacitance (Cc), pF: 0.6
Forward current transfer ratio (hFE), min: 38
Noise Figure, dB: -
Package of BF199 transistor: TO92