BDX67B NPN 150V 5A 150W TO3
Description
BDX67B NPN 150V 5A 150W TO3
- Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 150
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 20
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 2000
Noise Figure, dB: -
Package of BDX67B transistor: TO3