BD684 Transistor PNP 120V 4A 40W
Description
BD684 Transistor PNP 120V 4A 40W
- Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A Max.
Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126