BD683 NPN 140V 4A 40W TO126
Description
BD683
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 40
Maximum collector-base voltage |Ucb|, V: 140
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 4
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 7
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 750
Noise Figure, dB: -
Package of BD683 transistor: TO126