BD649 NPN 100V 8A 62W TO220
Description
BD649
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 62
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 750
Noise Figure, dB: -
Package of BD649 transistor: TO220