BD517 NPN 60V 2A 10W TO202
Description
BD517
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of BD517 transistor: TO202
