BD351 NPN 80V 30A 160W TO3
Description
BD351
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 160
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 30
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 600
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: -
Package of BD351 transistor: TO3