BD349 NPN 80V 3A 20W TO126
Description
BD349
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 20
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 15
Forward current transfer ratio (hFE), min: 50
Noise Figure, dB: -
Package of BD349 transistor: TO126