BD317 NPN 100V 16A 200W TO3
Description
BD317
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 200
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 100
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 16
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 1
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 25
Noise Figure, dB: -
Package of BD317 transistor: TO3