BC109B NPN 30V 100mA 300mW TO18
Description
BC109B NPN 30V 100mA 300mW TO18
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 150 MHz
- Collector Capacitance (Cc): 5 pF
- Forward Current Transfer Ratio (hFE), MIN: 200
- Noise Figure, dB: -
- Package: TO18
