3SK59 MOS-N-FET Dual- Gate T072 20V FM/VHF
Description
3SK59
Type of 3SK59 transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.3
Maximum drain-source voltage |Uds|, V: 20
Maximum gate-source voltage |Ugs|, V: 9
Maximum drain current |Id|, A: 0.03
Maximum junction temperature (Tj), °C: 150
Rise Time of 3SK59 transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 5
Maximum drain-source on-state resistance (Rds), Ohm: 200
Package: TO72