2SB 475 PNP 20V 300mA 150mW TO1
Description
2SB475
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 20 V
- Maximum Collector-Emitter Voltage |Vce|: 10 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 0.3 A
- Max. Operating Junction Temperature (Tj): 75 °C
- Transition Frequency (ft): 0.2 MHz
- Forward Current Transfer Ratio (hFE), MIN: 75
- Noise Figure, dB: -
- Package: TO1
