2SB 170 PNP 30V 10mA TO 1
Description
2SB170
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.125
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.01
Maksimalna temperatura (Tj), °C: 75
Transition frequency (ft), MHz: 0.1
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of 2SB170 transistor: TO1