2N5416 PNP 350V 1A 10W TO5
Description
2N5416 PNP 350V 1A 10W TO5
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 10 W
- Maximum Collector-Base Voltage |Vcb|: 350 V
- Maximum Collector-Emitter Voltage |Vce|: 300 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 115 MHz
- Collector Capacitance (Cc): 15 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
- Noise Figure, dB: -
- Package: TO5