2N5401 PNP 160V 600mA 310mW TO92
Description
2N5401 PNP 160V 600mA 310mW TO92
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.31 W
- Maximum Collector-Base Voltage |Vcb|: 160 V
- Maximum Collector-Emitter Voltage |Vce|: 150 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.6 A
- Max. Operating Junction Temperature (Tj): 135 °C
- Transition Frequency (ft): 100 MHz
- Collector Capacitance (Cc): 6 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: TO92